Universiti Teknologi Malaysia Institutional Repository

Characterization of 0.5 At % Nd doped YVO(4) pumped by diode laser

Bidin, Noriah and Krishnan, G. (2011) Characterization of 0.5 At % Nd doped YVO(4) pumped by diode laser. Enabling Science And Nanotechnology, 1341 . pp. 272-274. ISSN 0094-243X

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Official URL: http://dx.doi.org/10.1063/1.3587000

Abstract

The output of diode laser pumped 0.5 at % Nd doped vanadate YVO4 crystal bar was characterized. Diode laser has wavelength centered at 808 nm. The pump power was focused to localize the high power density of source at the crystal bar surface. The output of diode pumped vanadate crystal was detected by a spectrum analyzer. The output radiation is centered at 1064 nm with linewidth of 1.15 nm. The stimulated emission cross section was estimated to be 14.94×10-19 cm2. The intensity of the fluorescent beam was measured by powermeter and permanently recorded by using CCD video camera. The beam spot is TEMoo mode with beam divergence of 0.4° with the absent of intracavity. The optical -to-optical slope efficiency is found to be as 4.8% with threshold power of 1404 mW.

Item Type:Article
Uncontrolled Keywords:rystal structure, crystal growth, heat transfer, light absorption,; interface structure and roughness, theory and models of crystal growth; physics of crystal growth, crystal morphology, and orientation, thermal radiation, wave propagation, transmission and absorption
Subjects:Q Science
Divisions:Science
ID Code:28871
Deposited By: Liza Porijo
Deposited On:30 Nov 2012 00:36
Last Modified:30 Nov 2012 00:36

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