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Band structure properties of novel BxGa1-xP alloys for silicon integration

Cockburn Hosea, Thomas Jeffrey and Sweeney, S. J. and Liebich, S. and Zimprich, M. and Volz, K. and Kunert, B. (2011) Band structure properties of novel BxGa1-xP alloys for silicon integration. Journal of Applied Physics, 110 (6). 001-005. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3630018


We have grown and investigated the band-structure properties of novel III-V alloys based upon BxGa1-xP. These layers are utilized as strain-compensating layers for the lattice-matched integration of novel direct bandgap Ga(NAsP) quantum well lasers on silicon. Experimental and theoretical studies reveal the dependence of the direct and indirect band gaps for strained BxGa1-xP layers grown on silicon as a function of Boron composition from which we derive the properties of free-standing BxGa1-xP. For Boron fractions up to 6%, we find that the bowing parameter for the lowest (indirect) band gap is -?6.2?±?0.2 eV. High crystalline quality and promising optical material properties are demonstrated and applied to monolithically integrated Ga(NAsP)/(BGa)P multi-quantum well heterostructures on (001) silicon substrates. Our results show that novel (BGa)P layers are suitable for strain compensation purposes, which pave the way towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.

Item Type:Article
Uncontrolled Keywords:annealing, boron compounds, energy gap, gallium arsenide, gallium compounds, III-V semiconductors, optical materials, semiconductor quantum wells, wide band gap semiconductors
Subjects:Q Science
ID Code:28863
Deposited By: Mrs Liza Porijo
Deposited On:29 Nov 2012 08:15
Last Modified:13 Feb 2017 03:26

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