Cockburn Hosea, Thomas Jeffrey and Sweeney, S. J. and Liebich, S. and Zimprich, M. and Volz, K. and Kunert, B. (2011) Band structure properties of novel BxGa1-xP alloys for silicon integration. Journal of Applied Physics, 110 (6). 001-005. ISSN 0021-8979
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.3630018
We have grown and investigated the band-structure properties of novel III-V alloys based upon BxGa1-xP. These layers are utilized as strain-compensating layers for the lattice-matched integration of novel direct bandgap Ga(NAsP) quantum well lasers on silicon. Experimental and theoretical studies reveal the dependence of the direct and indirect band gaps for strained BxGa1-xP layers grown on silicon as a function of Boron composition from which we derive the properties of free-standing BxGa1-xP. For Boron fractions up to 6%, we find that the bowing parameter for the lowest (indirect) band gap is -?6.2?±?0.2 eV. High crystalline quality and promising optical material properties are demonstrated and applied to monolithically integrated Ga(NAsP)/(BGa)P multi-quantum well heterostructures on (001) silicon substrates. Our results show that novel (BGa)P layers are suitable for strain compensation purposes, which pave the way towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.
|Uncontrolled Keywords:||annealing, boron compounds, energy gap, gallium arsenide, gallium compounds, III-V semiconductors, optical materials, semiconductor quantum wells, wide band gap semiconductors|
|Deposited By:||Liza Porijo|
|Deposited On:||29 Nov 2012 08:15|
|Last Modified:||13 Feb 2017 03:26|
Repository Staff Only: item control page