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Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor

Arora, Vijay Kumar and Zainal Abidin, Mastura Shafinaz and Tembhurne, Saurabh and Riyadi, Munawar A. (2011) Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor. Applied Physics Letters, 99 (6). 001-003. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3621885

Abstract

The degradation of ballistic mobility in a metal-oxide semiconductor field-effect transistor is attributed to the nonstationary ballistic injection from the contacts as the length of a channel shrinks to the length smaller than the scattering-limited mean free path. Apparent contradiction between the rise of magnetoresistance mobility and fall of drift mobility with increasing channel concentration is attributed to scattering-dependent magnetoresistance factor. The ballistic mean free path of injected carriers is found to be substantially higher than the long-channel drift mean free path. Excellent agreement with the experimental data on length-limited ballistic mobility is obtained.

Item Type:Article
Uncontrolled Keywords:ballistic transport, carrier mean free path, carrier mobility, enhanced magnetoresistance, MOSFET
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:28816
Deposited By: Liza Porijo
Deposited On:29 Nov 2012 04:39
Last Modified:29 Nov 2012 04:39

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