Sakrani, Samsudi and D. Hutagalung, Sabar and Wahab, Yusof and Moin, Mastura (1996) SnS thin films prepared by encapsulated sulfurization. Buletin of Malaysian Solid State Science & Technology, 6 (2). pp. 43-50. ISSN 0128-5637
Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and annealed in argon gas at temperatures between 260-450 oC for three hours to allow the formation of SnS thin films by chemical reaction which took place in the Sn/S bilayer. In the early stage (260 oC) Sn was sulfurized between 300-400 oC changed the process rapidly and dominantly into SnS with improved crystallinity. The measured resistivities were found to be between 0.65-2.92 Sm-1 over the range of substrate temperature concerned.
|Uncontrolled Keywords:||Tin sulphide (SnS) thin films, encapsulated sulfurization|
|Subjects:||Q Science > QC Physics|
|Deposited By:||Samsudi Sakrani|
|Deposited On:||11 Apr 2008 03:47|
|Last Modified:||01 Jun 2010 03:05|
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