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SnS thin films prepared by encapsulated sulfurization

Sakrani, Samsudi and D. Hutagalung, Sabar and Wahab, Yusof and Moin, Mastura (1996) SnS thin films prepared by encapsulated sulfurization. Buletin of Malaysian Solid State Science & Technology, 6 (2). pp. 43-50. ISSN 0128-5637

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Abstract

Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and annealed in argon gas at temperatures between 260-450 oC for three hours to allow the formation of SnS thin films by chemical reaction which took place in the Sn/S bilayer. In the early stage (260 oC) Sn was sulfurized between 300-400 oC changed the process rapidly and dominantly into SnS with improved crystallinity. The measured resistivities were found to be between 0.65-2.92 Sm-1 over the range of substrate temperature concerned.

Item Type:Article
Uncontrolled Keywords:Tin sulphide (SnS) thin films, encapsulated sulfurization
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:2867
Deposited By: Samsudi Sakrani
Deposited On:11 Apr 2008 03:47
Last Modified:01 Jun 2010 03:05

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