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All-optical switches based on GaAs/AlGaAs quantum dots vertical cavity

Ismail, Fairuz Diyana and Jomtarak, R. and Teeka, C. and Ali, Jalil and Yupapin, P. P. (2011) All-optical switches based on GaAs/AlGaAs quantum dots vertical cavity. Journal Of Nonlinear Optical Physics & Materials, 20 (2). pp. 205-215. ISSN 0218-8635

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Official URL: http://dx.doi.org/10.1142/S0218863511006030


In this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. Two essential aspects of this novel device have been investigated, which include the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. The vertical-reflection-type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As and 25 periods for the front and back mirrors, respectively. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, the 65 nm dimension of Si was recommended to deposit within a 20 nm AlAs QW. Results obtained have shown that all-optical switching via the QD excited states has been achieved with a time constant down to 275-fs and over 29.5 nm tunable wavelengths. These results demonstrated that QDs within a vertical cavity have great potential to realize low-power, consumption polarization-insensitive and micrometer-sized switching devices for future optical communication and signal processing systems.

Item Type:Article
Uncontrolled Keywords:all-optical switches, quantum dots, vertical cavity, atom bottom-up
Subjects:Q Science
ID Code:28665
Deposited By: Mrs Liza Porijo
Deposited On:12 Nov 2012 08:01
Last Modified:13 Feb 2017 02:43

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