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A model for length of saturation velocity region in double-gate graphene nanoribbon transistors

Ghadiry, M. H. and Nadi S. , M. and Ahmadi, Mohammad Taghi and Abd Manaf, A. (2011) A model for length of saturation velocity region in double-gate graphene nanoribbon transistors. Microelectronics Reliability, 51 (12). pp. 2143-2146. ISSN 0026-2714

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Official URL: http://dx.doi.org/10.1016/j.microrel.2011.07.009

Abstract

Length of saturation region (LVSR) as an important parameter in nanoscale devices, which controls the drain breakdown voltage is in our focus. This paper presents three models for surface potential, surface electric field and LVSR in double-gate Graphene nanoribbon transistors. The Poisson equation is used to derive surface potential, lateral electric field and LVSR. Using the proposed models, the effect of several parameters such as drain-source voltage, oxide thickness, doping concentration and channel length on the LVSR is studied.

Item Type:Article
Uncontrolled Keywords:channel length, doping concentration, double-gate, drain-source voltage, graphene nano-ribbon, lateral electric field, nanoscale device, oxide thickness, saturation region, saturation velocity, surface electric fields, three models
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:28584
Deposited By: Liza Porijo
Deposited On:25 Oct 2012 06:39
Last Modified:25 Oct 2012 06:39

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