Ghadiry, Mahdiar Hossein and Nadi S., M. and Ahmadi, Mohammad Taghi and Abd. Manaf, Asrulnizam (2011) A model for length of saturation velocity region in double-gate graphene nanoribbon transistors. Microelectronics Reliability, 51 (12). pp. 2143-2146. ISSN 0026-2714
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Official URL: http://dx.doi.org/10.1016/j.microrel.2011.07.009
Abstract
Length of saturation region (LVSR) as an important parameter in nanoscale devices, which controls the drain breakdown voltage is in our focus. This paper presents three models for surface potential, surface electric field and LVSR in double-gate Graphene nanoribbon transistors. The Poisson equation is used to derive surface potential, lateral electric field and LVSR. Using the proposed models, the effect of several parameters such as drain-source voltage, oxide thickness, doping concentration and channel length on the LVSR is studied.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Channel length, doping concentration, double-gate, drain-source voltage, oxide thickness |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 28584 |
| Deposited By: | Yanti Mohd Shah |
| Deposited On: | 25 Oct 2012 06:39 |
| Last Modified: | 28 Jan 2019 03:35 |
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