Universiti Teknologi Malaysia Institutional Repository

Gateless-FET undoped AlGaN/GaN HEMT structure for liquid-phase sensor

Hashim, Abdul Manaf and Abd Rahman, Shaharin Fadzli and Ab Rahman, Ab Rahim and Qindeel, Rabia and M. S., Z. Abidin and M. E., Sharifabad and N. A., Omar and A. A., Aziz (2010) Gateless-FET undoped AlGaN/GaN HEMT structure for liquid-phase sensor. In: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 28-30 June 2010, Melaka, Malaysia.

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Official URL: http://dx.doi.org/10.1109/SMELEC.2010.5549371


A gateless field-effect-transistor (FET) device fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure is investigated as a liquid-phase sensor. Good gate controllability for typical current-voltage (I-V) characteristics of FET is observed. This result shows that an undoped-AlGaN surface at the open-gate area is effectively controlled by the isolated gate voltage via chemical solution. Stable pH sensing operation in aqueous solution is observed where this device exhibits a high linear sensitivity of 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V. Due to the occurrence of large leakage current, the Nernstian's like sensitivity is not observed. It is also found that the device is sensitive to changes in electrostatic boundary conditions of the polar liquids. This indicates that the change in dipole moment in each liquid causes the potential change at AlGaN surface.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:Aluminum gallium nitride,Gallium nitride,HEMTs, Sensor phenomena and characterization
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:27922
Deposited By: Mrs Liza Porijo
Deposited On:29 Aug 2012 03:08
Last Modified:03 Jul 2017 03:50

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