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Carbon nanotube band structure effect on carbon nanotube field effect transistor

Johari, Zaharah and Ismail, Razali and M. T., Ahamdi and J. F., Webb (2010) Carbon nanotube band structure effect on carbon nanotube field effect transistor. In: AIP Conference Proceedings, 2010, Gold Coast, Australia.

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Official URL: http://dx.doi.org/10.1063/1.3459757

Abstract

The band structure of a carbon nanotube (CNT) near to the minimum band energy is parabolic. However it is not parabolic in other parts of the band energy. In the parabolic part, based on the confinement effect, we present an analytical model that captures the essence of the physical processes relevant to the operation of a carbon nanotube field effect transistor (CNTFET). The model covers seamlessly the whole range of transport from drift-diffusion to ballistic. It has been clarified that the intrinsic speed of CNTs is governed by the transit time of electrons. Although the transit time is more dependent on the saturation velocity than on the weak-field mobility, the feature of high-electron mobility is beneficial in the sense that the drift velocity is always maintained closer to the saturation velocity, at least at the drain end of the transistor where the electric field is necessarily high and controls the saturation current. The results obtained are applied to the modeling of the current-voltage characteristics of a CNTFET. The channel-length modulation is shown to arise from the drain velocity becoming closer to the ultimate saturation velocity as the drain voltage is increased.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:carbon nanotubes, band structure, field effect devices, carrier mobility, nanotube devices, other metals and alloys, field effect devices, mobility edges, hopping transport
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:27108
Deposited By: Liza Porijo
Deposited On:27 Jul 2012 07:02
Last Modified:27 Jul 2012 07:02

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