Arora, Vijay Kumar and I., Saad and M. A., Riyadi and M., Taghi and F. M. N., Zul Atfyi (2010) Analytical analysis of ballistic drift velocity in low-dimensional nano-devices. In: AMS2010: Asia Modelling Symposium 2010 - 4th International Conference on Mathematical Modelling and Computer Simulation, 2010, Kota Kinabalu, Malaysia.
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Official URL: http://dx.doi.org/10.1109/AMS.2010.121
The analytical analysis of ballistic drift velocity for low-dimensional nanodevices was presented. The ballistic transport is predicted in the presence of high electric field for non-degenerate and degenerate regime. The saturation velocity is found to be ballistic regardless of the device dimensions. The intrinsic velocity limits this saturation velocity. It’s does not sensitively depend on the ballistic or scattering-limited nature of the mobility. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the non-degenerate realm, the intrinsic velocity is the thermal velocity that depends only on the ambient temperature.
|Item Type:||Conference or Workshop Item (Paper)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||27 Jul 2012 04:04|
|Last Modified:||05 Feb 2017 08:02|
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