Othaman, Zulkafli and Ismail, Abd Khamim and Aryanto, Didik and Ameruddin, Amira Saryati (2010) Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode. Sains Malaysiana, 39 (6). pp. 1025-1030. ISSN 0126-6039
In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In addiditon, self-assembled In0.5Ga0.5As QDs was grown on In0.1Ga0.9As underlying layer with different after-growth AsH3 flow time during cooling-down. The underlying layer caused lattice strain relaxation in the QDs on the surface. Increasing the period of AsH3 flow during cooling-down reduced the diameter of the dots and increased the density. The migration of groups III species in the growth of In0.5Ga0.5As/GaAs system was influenced by AsH3 flow during cooling-down period. This was due to the increase in surface population of active arsenic species. Underlying layer and the period of AsH3 flow during cooling-down are the two key factors in the fabrication of small and dense In0.5Ga0.5As QDs.
|Uncontrolled Keywords:||quantum dots, stranski-krastanov|
|Deposited By:||Liza Porijo|
|Deposited On:||18 Jul 2012 03:46|
|Last Modified:||25 Aug 2014 05:21|
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