Mohamad, Mazuina and Mustafa, Farahiyah and Abd. Rahman, Shaharin Fadzli and Zainal Abidin, Mastura Shafinaz and Al-Obaidi, N. K. A. and Hashim, Abd. Manaf and Abdul Aziz, Azlan and Hashim, Md. Roslan (2010) The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a). Journal of Applied Sciences, 10 (16). 1797 -1801. ISSN 1812-5654
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Official URL: http://scialert.net/abstract/?doi=jas.2010.1797.18...
Abstract
High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been investigated. A 5 nm-thick of catalytic Pt Schottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 and 17.6 nA sec-1, respectively at constant forward bias of 1 V and temperature of 200°C.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Schottky diodes, AlGaN/GaN |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 26563 |
| Deposited By: | Widya Wahid |
| Deposited On: | 18 Jul 2012 02:52 |
| Last Modified: | 31 Oct 2018 12:30 |
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