Abd Rahman , Shaharin Fadzli and Hashim, Abd Manaf and M., Mohamad and F., Mustafa and M. S. Z., Abidin and N. K. A., Al-Obaidi and A. A., Aziz and M. R., Hashim (2010) The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a). Journal of Applied Sciences, 10 (16). 1797 - 1801. ISSN 1812-5654
Official URL: http://scialert.net/abstract/?doi=jas.2010.1797.18...
High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been investigated. A 5 nm-thick of catalytic Pt Schottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 and 17.6 nA sec-1, respectively at constant forward bias of 1 V and temperature of 200°C.
|Uncontrolled Keywords:||schotthky diode, AlGaN/GaN. HEMT, gas sensor, hydrogen|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||18 Jul 2012 02:52|
|Last Modified:||06 Aug 2012 02:49|
Repository Staff Only: item control page