Ismail, Razali and M. A., Riyadi and J. E., Suseno (2010) The future of non-planar nanoelectronics MOSFET devices: a review. Journal of Applied Sciences, 10 (18). 2136 - 2146. ISSN 1812-5654
Official URL: http://scialert.net/abstract/?doi=jas.2010.2136.21...
This study was focused on the evaluation of present development of nanoelectronic devices and the projection of future devices, ultimately for non-planar geometry. The recent scaling of IC technology was limiting the employment of conventional, planar structure, thus implies in the wake of the research in non-classical architecture. The present status of extended planar silicon devices, including the insertion of high-k dielectric, metal gate and SOI MOSFET in the recent manufacturing process is elaborated. The alternative path in the enhancement of IC device performance, merely in the sub-50nm dimension is shown, with the role of double gate MOSFET and non-planar structure devices, including vertical FETs, is expected to take greater share, as well as several emerging nanostructures. The possibility to implement the non-planar devices generation heavily depends on the maturity of each technology and the ability to clear the obstacles in processing.
|Uncontrolled Keywords:||nanoelectronics, non-planar structures, vertical MOSFET, double gate, emerging device|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||18 Jul 2012 02:51|
|Last Modified:||06 Aug 2012 02:46|
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