Mustafa, Farahiyah and Parimon, Norfarariyanti and Hashim, Abdul Manaf and Abd. Rahman, Shaharin Fadzli and Abdul Rahman, Abdul Rahim and Osman, Mohd. Nizam (2010) RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems. Microsystem Technologies, 16 (10). pp. 1713-1717. ISSN 0946-7076
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Official URL: http://dx.doi.org/10.1007/s00542-010-1099-4
Abstract
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GaAs, Series resistance, Power conversion efficiency |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 26551 |
| Deposited By: | Widya Wahid |
| Deposited On: | 18 Jul 2012 01:55 |
| Last Modified: | 31 Oct 2018 12:36 |
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