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RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

Hashim, Abdul Manaf and Abd Rahman, Shaharin Fadzli and Ab Rahman, Ab Rahim and F., Mustafa and N., Parimon and M. N., Osman (2010) RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems. Microsystem Technologies, 16 (10). 1 - 5. ISSN 0946-7076

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Official URL: http://dx.doi.org/10.1007/s00542-010-1099-4

Abstract

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:26551
Deposited By: Liza Porijo
Deposited On:18 Jul 2012 01:55
Last Modified:06 Aug 2012 02:23

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