Mustafa, F. and Parimon, N. and Hashim, Abdul Manaf and Abd Rahman, Shaharin Fadzli and Ab Rahman, Ab Rahim and Osman, M. N. (2010) RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems. Microsystem Technologies, 16 (10). 1 - 5. ISSN 0946-7076
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1007/s00542-010-1099-4
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||18 Jul 2012 01:55|
|Last Modified:||21 Feb 2017 03:54|
Repository Staff Only: item control page