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Investigation of carbon thin films by pulsed laser deposition at different temperatures

Qindeel , Rabia and Ali, Jalil and Saktioto, Sakitoto and K. T., Chaudhary and K. A., Bhatti and M. S., Hussain (2010) Investigation of carbon thin films by pulsed laser deposition at different temperatures. Journal of Non - Oxide Glasses, 4 (11). 1728 - 1732. ISSN 2605-6874

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Abstract

Effect of temperature on the deposition of Carbon thin Film is reported in this paper. KrF Excimer laser (248 nm, 13-50 mJ and 20 ns) is focused at an angle of 45° on pure graphite target. Silicon (111) wafer, as a substrate is placed at distance of 15 mm from the target surface. The carbon thin films have been deposited at temperatures 20°C and 300°C. 10,000 pulses of KrF laser are irradiated to deposit each film under a vacuum ~ 10-4 Torr. Surface morphology is investigated by analyzing micrographs of Atomic Force Microscope (AFM). X-Ray Diffraction (XRD) and Fourier Infrared Transformation Spectroscopy (FTIR) techniques are employed for the structure analysis and to study nature of bonding of deposited thin films at different temperatures. Results obtained from techniques AFM, XRD and FTIR support each other and explain the effect of substrate temperature on carbon thin films deposited by Pulsed Laser Deposition (PLD) method.

Item Type:Article
Uncontrolled Keywords:pulsed laser deposition, diamond like carbon, AFM, FTIR, XRD, carbon plasma
Subjects:Q Science
Divisions:Science
ID Code:26296
Deposited By: Liza Porijo
Deposited On:29 Jun 2012 03:51
Last Modified:19 Aug 2014 09:18

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