Ismail, Razali and A. Riyadi, Munawar and Saad, Ismail (2010) Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET. Microelectronics Journal, 41 (12). 827 - 833. ISSN 0026-2692
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Official URL: http://dx.doi.org/10.1016/j.mejo.2010.07.004
The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillarthickness in vertical structure. This paper investigates the effect of pillarthicknessvariation on verticaldoublegateMOSFET (VDGM) fabricated using obliquerotating ion implantation (ORI) method. For this purpose, several scenarios of silicon pillarthicknesstsi were evaluated for 20–100 nm channel length. The source region was found to merge at pillarthickness below 75 nm, which results in floating body effect and creates isolated region in the middle of pillar. The vertical devices using ORI method show better performance than those with conventional implantation method for all pillarthickness, due to the elimination of corner effect that degrades the gate control. The presence of isolated depletion region in the middle of pillar at floating body increases parasitic effect for higher drain potential. By further reduction of pillarthickness towards fully depleted feature, the increase in gate-to gate charge coupling improves the performance of ORI-basedverticaldoublegateMOSFET, as evident in near-ideal swing value and lower DIBL, compared to the partially depleted and body-tied device.
|Uncontrolled Keywords:||vertical MOSFET, oblique rotating ion implantation, doublegate, silicon thicknesseffect, fully depleted|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||29 Jun 2012 01:27|
|Last Modified:||08 Feb 2017 07:42|
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