Wahab, Yussof and Y. W., Woon and Deraman, Karim (2010) Excess silicon concentration dependence of the structural and optical properties of silicon nanocrystals embedded in silicon oxide matrix. International Journal of Nanomanufacturing, 5 (12). 79 - 87. ISSN 1746-9392
Official URL: http://dx.doi.org/10.1504/IJNM.2010.029925
Silicon (Si) nanocrystals embedded in Si oxide matrix have been formed by rapid thermal annealing of sub-stoichiometric Si oxide films (SiOx with x < 2). The SiOx films were deposited by co-sputtering of Si oxide and Si target using magnetron RF sputtering technique. The Si-to-SiO2 ratio was controlled by varying the number of Si chips being placed on the pure SiO2 target during sputtering. Rapid thermal anneal in nitrogen gas at 1100°C lead to the decomposition of SiOx into Si nanocrystals and SiO2. The structural (size of nanocrystals) and optical properties (absorption and luminescence) of Si nanocrystals embedded in oxide matrix, were found, strongly depend on the initial excess Si concentration in SiOx films.
|Uncontrolled Keywords:||silicon nanocrystals, structural properties, optical properties, silicon oxide matrix, nanomaterials, nanotechnology, magnetron RF sputtering, nanocrystal size, optical properties, absorption, luminescence|
|Deposited By:||Liza Porijo|
|Deposited On:||28 Jun 2012 01:49|
|Last Modified:||12 Jul 2012 06:38|
Repository Staff Only: item control page