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Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT

Hashim, Abdul Manaf and Abd Rahman, Shaharin Fadzli and M. , Mohamad and F., Mustafa and A. A., Aziz and M. R., Hashim (2010) Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT. Journal of Applied Sciences, 10 (19). 2338 - 2342. ISSN 1812-5654

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Official URL: http://scialert.net/abstract/?doi=jas.2010.2338.23...

Abstract

In this study, Pt-circular Schottky diode is successfully fabricated for gas sensor application. The fabricated Schottky diode shows good rectification characteristics. The device which shows improvement in term of wiring connection for electrical characterization is fabricated. The DC I-V curves of fabricated Schottky diodes show low series resistance of 210 O and 330 O. The Schottky barrier height (SBH) in the range of 0.458-0.708 eV are experimentally obtained and the discrepancy with the calculated SBH is discussed. A measurement setup that has a capability to allow measurement at high temperature, high hydrogen gas density and low vacuum pressure is also presented. The fabricated device is expected to be suitable for gas sensing application.

Item Type:Article
Uncontrolled Keywords:HEMT, gas sensor, schottky diode, AIGaN/GaN, wide bandgap
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:26153
Deposited By: Liza Porijo
Deposited On:27 Jun 2012 08:36
Last Modified:06 Jul 2012 03:17

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