Hashim , Abdul Manaf (2010) Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimenthylsilane. Jurnal Teknologi .
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| Item Type: | Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 25949 |
| Deposited By: | Liza Porijo |
| Deposited On: | 18 Jun 2012 03:42 |
| Last Modified: | 18 Jun 2012 03:42 |
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