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Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimenthylsilane

Hashim , Abdul Manaf (2010) Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimenthylsilane. Jurnal Teknologi .

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Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:25949
Deposited By: Liza Porijo
Deposited On:18 Jun 2012 03:42
Last Modified:18 Jun 2012 03:42

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