Hashim , Abdul Manaf (2008) Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition. Journal of Applied Sciences, 8 . pp. 3473-3478. ISSN 1812-5654
Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr.
|Uncontrolled Keywords:||x-ray diffraction, chemical vapor deposition, carbonization, silicon compound, silicon carbide|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||18 Jun 2012 01:18|
|Last Modified:||18 Jun 2012 01:18|
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