Universiti Teknologi Malaysia Institutional Repository

Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition

Hashim , Abdul Manaf (2008) Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition. Journal of Applied Sciences, 8 (19). pp. 3473-3478. ISSN 1812-5654

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Abstract

Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr.

Item Type:Article
Uncontrolled Keywords:x-ray diffraction, chemical vapor deposition, carbonization, silicon compound, silicon carbide
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:25919
Deposited By: Liza Porijo
Deposited On:18 Jun 2012 01:18
Last Modified:17 Feb 2014 04:24

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