Ismail, Kamariah and Baba, Noor Hasimah and Awang, Zaiki and Esa, Mazlina (2005) Microwave characterization of silicon wafer using rectangular dielectric waveguide. In: RF and Microwave Conference, 2006. RFM 2006. International. IEEE, 411 -415. ISBN 0-7803-9745-2
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Official URL: http://dx.doi.org/10.1109/RFM.2006.331116
A non-destructive and easy to use method is presented to characterize p-type and n-type silicon semiconductor wafers using a rectangular dielectric waveguide measurement (RDWG) system. The measurement system consists of a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide adapter and dielectric-filled standard gain horn antenna. In this method, the reflection and transmission coefficients, S11 and S21 were measured for silicon wafer sandwiched between the two Teflon, the dielectric that filled the standard gain horn antenna. It was observed that, the dielectric constant of the silicon wafers are relatively constant, varying slightly over the frequency range of 9 to 12 GHz. The loss factor, loss tangent and conductivity of the doped wafers are higher than the undoped type.
|Item Type:||Book Section|
|Uncontrolled Keywords:||microwave characterization, rectangular dielectric waveguide, silicon wafer|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||12 Jun 2012 04:28|
|Last Modified:||05 Feb 2017 03:54|
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