Abdul Manaf, Hashim and Yasui, Kanji (2006) Low temperature heteroepitaxial growth of 3C-SiC on si substacted by rapid thermal plasma CVD using dimenthysilane. In: 2006 IEEE International Conference on Semiconductor Electronics, 2006, Kuala Lumpur.
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| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 25204 |
| Deposited By: | Liza Porijo |
| Deposited On: | 14 May 2012 01:31 |
| Last Modified: | 14 May 2012 01:31 |
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