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Low temperature heteroepitaxial growth of 3C-SiC on si substacted by rapid thermal plasma CVD using dimenthysilane

Abdul Manaf, Hashim and Yasui, Kanji (2006) Low temperature heteroepitaxial growth of 3C-SiC on si substacted by rapid thermal plasma CVD using dimenthysilane. In: 2006 IEEE International Conference on Semiconductor Electronics, 2006, Kuala Lumpur.

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Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:25204
Deposited By: Liza Porijo
Deposited On:14 May 2012 01:31
Last Modified:14 May 2012 01:31

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