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Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control

Yahaya, Hafizal and Ikoma, Yoshifumi and Kuriyama, Keiji and Motooka, Teruaki (2010) Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control. In: The 7th International Conference on Thin Film Physics and Applications (TFPA), 26 Sept, 2010, Shanghai, China.

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Official URL: http://dx.doi.org/10.1117/12.888388

Abstract

We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH3SiH3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of 10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH3SiH3 pulse jets

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:nanopore, SOI, SIMOX, supersonic jet CVD, SiC, Si, heteroepitaxial growth, pit formation
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Science
ID Code:24575
Deposited By: Dr Hafizal Yahaya
Deposited On:13 Apr 2012 07:35
Last Modified:13 Apr 2012 07:35

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