Ismail, Razali and Saad, Ismail (2007) Characterization analysis of nano scale vertical double gate MOSFET (VDGM) using TCAD. In: 4th International Conference on Materials for Advanced Technologies (ICMAT 2007), 1st – 6th July 2007, Singapore.
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Abstract
We experimentally demonstrate and characterize a vertical (current flow that is perpendicular to the wafer) source (bottom)/drain (top) double-gate capacitorless single-transistor DRAM on a bulk silicon wafer.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 24427 |
| Deposited By: | INVALID USER |
| Deposited On: | 18 Apr 2012 05:41 |
| Last Modified: | 03 Aug 2017 00:33 |
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