Hashim, Abdul Manaf and Izwan Alias, Quairul and Kasai, Seiya and Hasegawa, Hideki (2007) Harmonic responses in 2DEG AlGaAs/GaAs HEMT devices due to plasma wave interaction. In: International Coference on Advancement of Materials and Nanotechnology 2007 (ICAMN 2007), 2007, Langkawi.
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.3377812
Abstract
Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ωp, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | surface plasma waves, drift plasma, THz device, GaAs, HEMT |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 24424 |
| Deposited By: | INVALID USER |
| Deposited On: | 18 Apr 2012 05:42 |
| Last Modified: | 01 Aug 2017 06:54 |
Repository Staff Only: item control page
