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Stacked structures In0.5Ga0.5As/GaAs quantum dots : growth and characterization

Othaman, Zulkafli and Aryanto, Didik and Ismail, Abd. Khamim and Yahya, Mohamad Razman and Soetedjo, Hariyadi (2010) Stacked structures In0.5Ga0.5As/GaAs quantum dots : growth and characterization. In: The 2nd International Conference on Applied Physics and Mathematics (ICAPM 2010), 7-10 May 2010, Kuala Lumpur.

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Official URL: http://dx.doi.org/10.1109/ICECTECH.2010.5479936


Stacked structures of self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) have been grown using Metal-Organic Chemical Vapor Deposition (MOCVD) with different number of stacks. High Resolution X-Ray Diffraction (HR-XRD) and Transmission Electron Microscope (TEM) characterization revealed that the formation of stacked self-assembled In0.5Ga0.5As QDs on GaAs (100) substrates were misaligned vertically and no visible defect has been detected from the cross-sectional TEM characterization. In addition, photoluminescence (PL) peak position is blue-shifted and PL intensity dramatically increased with increasing number of stacks. The peak and intensity of the PL measurement strongly depend on the structural of stacked self-assembled QDs and also the number of QDs layers.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:HR-XRD, Quantum dot, TEM, stacked structure
Subjects:Q Science
ID Code:24289
Deposited By: Mrs Liza Porijo
Deposited On:25 Sep 2012 08:25
Last Modified:25 Sep 2012 08:26

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