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RF-DC power conversion efficiency of schottky diode fabricated on n-AlGaAs/GaAs HEMT structure for on-chip rectenna application

Hashim, Abdul Manaf and Abd. Rahman, Shaharin Fadzli and Abdul Rahman, Abdul Rahim and M., Farahiyah and A. Z. , Nor Abidah (2010) RF-DC power conversion efficiency of schottky diode fabricated on n-AlGaAs/GaAs HEMT structure for on-chip rectenna application. In: Regional Annual Fundamental Science Symposium 2010 (RAFSS 2010), 8-9 June 2010, Grand Seasons Hotel, Kuala Lumpur.

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Official URL: http://ieeexplore.ieee.org/abstract/document/53941...

Abstract

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device application without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 20 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:Power conversion, Schottky diodes, Gallium arsenide, Rectennas, Nanoscale devices, Frequency estimation,
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:24234
Deposited By: Mrs Liza Porijo
Deposited On:06 Aug 2012 06:58
Last Modified:03 Jul 2017 04:08

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