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RF-DC power conversion efficiency of schottky diode fabricated on n-AlGaAs/GaAs HEMT structure for on-chip rectenna application

Hashim, Abdul Manaf and Abd. Rahman, Shaharin Fadzli and Abdul Rahman, Abdul Rahim and M., Farahiyah and A. Z. , Nor Abidah (2010) RF-DC power conversion efficiency of schottky diode fabricated on n-AlGaAs/GaAs HEMT structure for on-chip rectenna application. In: Regional Annual Fundamental Science Symposium 2010 (RAFSS 2010), 8-9 June 2010, Grand Seasons Hotel, Kuala Lumpur.

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Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:24234
Deposited By: Liza Porijo
Deposited On:06 Aug 2012 06:58
Last Modified:06 Aug 2012 07:02

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