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Quantum effect capacitance and drift velocity for nanoscale strained silicon metal-oxide-semiconductor field effect transistor

Ismail, Razali and Yau, Wei Heong and Ahmadi, Mohammad Taghi (2010) Quantum effect capacitance and drift velocity for nanoscale strained silicon metal-oxide-semiconductor field effect transistor. In: 2010 International Conference on Nanoscience and Nanotechnology (ICONN 2010), 22 - 26 Feb 2010, Sydney, Australia.

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Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:Quantum effect, metal-oxide-semiconductor
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:24208
Deposited By: Liza Porijo
Deposited On:25 Sep 2012 03:25
Last Modified:25 Sep 2012 03:25

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