Ismail, Razali and Yau, Wei Heong and Ahmadi, Mohammad Taghi (2010) Quantum effect capacitance and drift velocity for nanoscale strained silicon metal-oxide-semiconductor field effect transistor. In: 2010 International Conference on Nanoscience and Nanotechnology (ICONN 2010), 22 - 26 Feb 2010, Sydney, Australia.
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Quantum effect, metal-oxide-semiconductor |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 24208 |
| Deposited By: | Liza Porijo |
| Deposited On: | 25 Sep 2012 03:25 |
| Last Modified: | 25 Sep 2012 03:25 |
Repository Staff Only: item control page
