Universiti Teknologi Malaysia Institutional Repository

Power conversion efficiency of schottky diode fabricated on n-AlGaAs/GaAs HEMT structure for rectenna application

Hashim, Abdul Manaf and Mustafa, Farahiyah and Parimon, Norfarariyanti and Abd. Rahman, Shaharin Fadzli and Abdul Rahman, Abdul Rahim and Osman, Mohd. Nizam (2010) Power conversion efficiency of schottky diode fabricated on n-AlGaAs/GaAs HEMT structure for rectenna application. In: Asia-Pacific Symposium on Applied Electromagnetics and Mechanics 2010, 28 - 30 July 2010.

Full text not available from this repository.


Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:24185
Deposited By: Liza Porijo
Deposited On:01 Aug 2012 04:30
Last Modified:01 Aug 2012 04:36

Repository Staff Only: item control page