Aain, Abu Khari and Ler, Chun Lee and Kordesch, Albert Victor (2007) The effect of MOSFET second-order nonlinearity on active inductor-based oscillators. In: Asia Pacific Conference on Applied Electromagnetics 2007. APACE 2007, 4-6 Dec. 2007, Melaka.
Official URL: http://dx.doi.org/10.1109/APACE.2007.4603974
Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing of an AI-based oscillator, depending on oscillation amplitude. The DC bias shift results in a change of the transistor transconductance and parasitic components from their original value, which will affect the oscillator resonance frequency. This explains why a small-signal S-parameter simulation is not sufficient to accurately predict the oscillation frequency and tuning range of AI-based oscillators, even at moderate oscillation amplitudes.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||active inductor-based, MOSFET, second-order linearity, S-parameter simulation|
|Subjects:||T Technology > T Technology (General)|
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Deposited By:||Ramli Haron|
|Deposited On:||05 Mar 2012 01:47|
|Last Modified:||05 Mar 2012 01:47|
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