Ismail, Mohd. Azmi (2005) A 900 MHz 1-W RF CMOS differential class-E power amplifier. In: The International Conference On Robotics, Vision, Information and Signal Processing, 2005, n/a.
![[img]](http://eprints.utm.my/style/images/fileicons/application_pdf.png)
|
PDF
76Kb |
Abstract
A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | class E, differential amplifier, finite inductance, lattice LC balun |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 21316 |
| Deposited By: | Liza Porijo |
| Last Modified: | 19 Jan 2012 08:52 |
Repository Staff Only: item control page
