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A 900 MHz 1-W RF CMOS differential class-E power amplifier

Ismail, Mohd. Azmi (2005) A 900 MHz 1-W RF CMOS differential class-E power amplifier. In: The International Conference On Robotics, Vision, Information and Signal Processing, 2005, n/a.

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Abstract

A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:class E, differential amplifier, finite inductance, lattice LC balun
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:21316
Deposited By: Liza Porijo
Last Modified:19 Jan 2012 08:52

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