Ismail, Mohd. Azmi (2005) A 900 MHz 1-W RF CMOS differential class-E power amplifier. In: The International Conference On Robotics, Vision, Information and Signal Processing, 2005, n/a.
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A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||class E, differential amplifier, finite inductance, lattice LC balun|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||07 Feb 2017 06:48|
|Last Modified:||07 Feb 2017 06:48|
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