Modelling of the current-voltage characteristics of a carbon nanotube field effect transistor

Abstract

Working on carbon nanotube field effect transistors (CNTFETs) involving the skill to treat electronic devices at the molecular scale. Nanotubes are being considered as the best candidates for high-speed applications. The charge transport in CNTs is controlled by mobility and saturation velocity. It has also been shown that the high mobility does not always lead to higher carrier velocity. In the high electric field, velocity vectors are changed from randomness to streamline. Velocity approach is applied to the modelling of the current-voltage characteristic of a carbon nanotube field effect transistor. According to the simulation results, in the absence of the quantum capacitance, the short channel effects are arising. However it is foreseeable that if the quantum capacitance takes into consideration, this effect can be improved.