Ahmadi, Mohammad Taghi and Saad, Ismail and Ismail, Razali and K. Arora, Vijay (2008) The ultimate drift velocity in degenerately doped nanowires. In: Proceedings of the 2nd Conference on Nanostructures (NS2008), 2008, Kish University, Kish Island, I.R. Iran.
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The mobility and saturation velocity are the two important parameters that control the charge transport in a conducting MOSFET channel. The limitation drift velocity is found to be appropriate thermal velocity for a nondegenerately doped, increasing with the temperature, but independent of carrier concentration. However, the limitation drift velocity is the Fermi velocity for degenerately doped silicon, increasing with carrier concentration but independent of the temperature.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||saturation velocity, fermi velocity, thermal velocity, nanowire|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||29 Nov 2011 08:55|
|Last Modified:||07 Feb 2017 06:57|
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