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Self-aligned double-gate (DG) vertical MOSFET’s using oblique rotating implantation (ORI) method with reduced parasitic capacitance

Saad, Ismail and A. Riyadi, Munawar and Ismail, Razali and K. Arora, Vijay (2008) Self-aligned double-gate (DG) vertical MOSFET’s using oblique rotating implantation (ORI) method with reduced parasitic capacitance. In: IEEE International Conference on Semiconductor Electronics (ICSE 2008), 2008, Johor Bahru, Johor.

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Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:19009
Deposited By: Liza Porijo
Deposited On:29 Nov 2011 08:55
Last Modified:29 Nov 2011 08:55

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