Saad, Ismail and Ahmadi, Mohammad Taghi and Ismail, Razali and K. Arora, Vijay (2008) High-field drift velocity limitation in quasi-2D nanostructures (1D quantum limit). In: Proceedings of the 2nd Conference on Nanostructures (NS2008), 2008, Kish University, Kish Island, I.R. Iran.
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The computation of ultimate drift velocity based on the asymmetrical distribution function for quasi-2D nanostructure and 1D quantum limit device has been revealed. The drift velocity is found to be ballistic that converts randomness in zero-field to streamlined one in a very high electric field. The limitation is due to appropriate thermal velocity in non - degenerately doped device that increases with the temperature. However, for degenerately doped device, the limitation is due to the Fermi velocity that increases with carrier concentration but independent of the temperature. The theory developed can be applied for an appropriate drain-current expression in 2D inverted channel of ballistic silicon nano-transistor.
|Item Type:||Conference or Workshop Item (Paper)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||29 Nov 2011 08:56|
|Last Modified:||07 Feb 2017 07:57|
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