Universiti Teknologi Malaysia Institutional Repository

Scattering-limited and ballistic transport in Nano-CMOS circuit

Saad, Ismail and Tan, Michael L. P. and Lee, Aaron Chii Enn and Ismail, Razali and Arora, Vijay K. (2008) Scattering-limited and ballistic transport in Nano-CMOS circuit. In: Workshop on Recent Advances of Low Dimensional Structures and Devices (WRA_LDSD 2008), 2008, UTM.

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Official URL: http://dx.doi.org/10.1016/j.mejo.2008.06.049

Abstract

The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate saturation velocity due to the presence of a finite electric field at the drain. The current–voltage characteristics of a MOSFET are obtained and shown to agree well with the experimental observations on an 80 nm channel. When scaling complementary pair of NMOS and PMOS channels, it is shown that the length of the channel is proportional to the channel mobility. On the other hand, the width of the channel is scaled inversely proportional to the saturation velocity of the channel. The results reported may transform the way the ULSI circuits are designed and their performance evaluated.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:ballistic mobility, nano MOSFET, saturation velocity, quantum confinement
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:16883
Deposited By: Liza Porijo
Deposited On:31 Oct 2011 09:03
Last Modified:31 Oct 2011 09:04

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