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Numerical Analysis of double gate (DG) vertical MOSFETs incorporating dielectric pocket (DP) in nanoscale regime

Saad, Ismail and Fauzan M. N., Zul Atfyi and A. Riyadi, Munawar and Ismail, Razali (2008) Numerical Analysis of double gate (DG) vertical MOSFETs incorporating dielectric pocket (DP) in nanoscale regime. In: Seminar Kebangsaan Pendidikan Sains dan Matematik, 2008, UTM.

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Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:16880
Deposited By: Liza Porijo
Deposited On:31 Oct 2011 08:55
Last Modified:31 Oct 2011 08:55

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