Universiti Teknologi Malaysia Institutional Repository

Current-voltage characteristics of a silicon nanowire transistor

Ahmadi, Mohammad Taghi and Lau, Hui Houg and Ismail, Razali and Arora, Vijay K. (2008) Current-voltage characteristics of a silicon nanowire transistor. In: Program and Abstract Book of the International Workshop on Recent Advances of Low Dimensional Structures and Devices, 2008, UK.

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Official URL: http://dx.doi.org/10.1016/j.mejo.2008.06.060


The nanowires and nanotubes are being considered as the best candidates for high-speed applications. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high-electric-field streaming are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The limited drift velocity is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the limited drift velocity is the Fermi velocity for a degenerately doped silicon nanowire, increasing with carrier concentration but independent of temperature. The results obtained are applied to the modeling of the current–voltage characteristics of a nanowire transistor.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:nanowire transistor, drift velocity, saturation velocity, current–voltage characteristics
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:16878
Deposited By: Mrs Liza Porijo
Deposited On:31 Oct 2011 08:53
Last Modified:07 Feb 2017 06:57

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