Ahmadi, Mohammad Taghi and Ismail , Razali and Arora, Vijay K. (2008) Carrier velocity in carbon nanotube field effect transistor. In: Proceeding of IEEE International Conference on Semiconductor Electronics (ICSE 2008), 2008, Johor Bahru, Johor.
Official URL: http://dx.doi.org/10.1109/SMELEC.2008.4770378
The fact that there are no dangling bond states at the surface of CNT allows for a wide choice of gate insulators. There fore the CNT are being considered as viable candidates for high-speed applications. The mobility and saturation velocity are the two important parameters that control the charge transport in a conducting MOSFET channel. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity in carbon nanotube due to the high electric-field streaming are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The limitation drift velocity is found to be appropriate thermal velocity for non-degenerate regime, increasing with the temperature, but independent of carrier concentration. However, the limitation drift velocity is the Fermi velocity for degenerate regime increasing with carrier concentration but independent of the temperature.
|Item Type:||Conference or Workshop Item (Paper)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||31 Oct 2011 08:46|
|Last Modified:||31 Oct 2011 08:46|
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