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The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor

Arora, Vijay K. and Hashim, Abdul Manaf and Check, Desmond and Saxena, Tanuj (2009) The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor. In: ISDR 2009, 2009, USA.

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Official URL: http://dx.doi.org/10.1109/ISDRS.2009.5378044

Abstract

The transient effects in a nano/micro-scale channel are severely affected by the resistance blowup due to sublinear current-voltage characteristics leading to velocity and current saturation. This resistance blow-up effect increases the transit-time delay through the device that decreases as length of the conducting channel is decreased, but always larger than that predicted from the application of Ohm's law. RC time constant is shown to enhance dramatically while RL time constant decreases considerably over and above the predictions of Ohm's law.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:16233
Deposited By: Liza Porijo
Deposited On:21 Oct 2011 02:55
Last Modified:21 Oct 2011 02:55

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