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Fabrication of open gate structure on GaN-Based HEMT for pH sensing

Mastura Shafinaz, Zainal Abidin and Maneea Eizadi, Sharifabad and Abdul Manaf, Hashim and Shaharin Fadzli, Abd Rahman and Abdul Rahim, Abdul Rahman and Mohd Nizam, Osman (2009) Fabrication of open gate structure on GaN-Based HEMT for pH sensing. In: 2009 International Semiconductor Device Research Symposium, ISDRS '09, 9 - 11 December 2009, College Park, MD; United States.

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Official URL: http://dx.doi.org/10.1109/ISDRS.2009.5378191

Abstract

In recent years, there has been demonstrated a rapid progress of the AlGaN/GaN system applications in optical and electronic device research due to its unique features. One of unique features of AlGaN/GaN system includes chemically stable where stability of surface is essentially important for liquid-phase sensor applications. Besides, AlGaN/GaN also allows highly sensitive detection of surface phenomena with the presence of a high-density two-dimensional electron gas (2DEG) in the high electron mobility transistor (HEMT) structure. Furthermore, the GaN material allows sensing operations at high temperatures due to large bandgap energies. This paper presents the design and fabrication of an open-gate structure on undoped AlGaN/GaN and n-AlGaN/GaN HEMT structure for sensing the pH level of certain electrolyte solutions. It is found that the drain-source current decreases with the pH level as expected.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:High Electron Mobility Transistor (HEMT)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:16185
Deposited By: Mrs Liza Porijo
Deposited On:20 Oct 2011 09:49
Last Modified:21 Jun 2017 03:41

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