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Formulation and simulation for electrical properties of a (5, 3) single wall carbon nanotube

Karamdel, Javad and Ahmadi, Mohammad Taghi and Majlis, Burhanuddin Yeop and Dee, C. F. and Ismail, Razali (2008) Formulation and simulation for electrical properties of a (5, 3) single wall carbon nanotube. In: Proceeding of IEEE International Conference on Semiconductor Electronics (ICSE 2008), 2008, Johor Bahru.

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Official URL: http://dx.doi.org/10.1109/SMELEC.2008.4770384

Abstract

Carbon Nano Tubes (CNTs) are potential candidate to be used in nano transistors and interconnection inside the ICs. In most of these applications, speed of the carriers is very important. Due to small sizes of CNTs, the mobility of electrons is ballistic. On the other hand because of the superabundant free electrons, most of CNTs are in the degenerate regime, where Boltzmann statistics can not be used. However different CNTs have various characteristics. In this research work we formulate and simulate the behavior of a (5, 3) Single Wall Carbon Nano Tube (SWCNT) by using Fermi-Dirac distribution function. Simulation results are in good agreement with the expected results of theoretical analysis. These results show that the E(k) relation of this SWCNT near the minimum energy is close to parabolic, and (Ef - Ec) is a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the nondegenerate (ND) regime. However, in degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:15988
Deposited By: Siti Khairiyah Nordin
Deposited On:16 Oct 2011 10:30
Last Modified:16 Oct 2011 10:30

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