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RF-to-DC characteristics of AIGaAs/GaAs HEMT schottky diode for on chip RF detector and rectenna application in nanosystems

Parimon, Nofarariyanti and Mustafa, Farahiyah and Abd Rahman, Shaharin Fadzli and Abdul Rahman, Abdul Rahim and Osman, Mohd. Nizam and Hashim, Abdul Manaf (2009) RF-to-DC characteristics of AIGaAs/GaAs HEMT schottky diode for on chip RF detector and rectenna application in nanosystems. In: NANOtech Malaysia 2009, 2009, Kuala Lumpur Convention Centre.

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Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:15681
Deposited By: Liza Porijo
Deposited On:07 Oct 2011 08:44
Last Modified:07 Oct 2011 08:44

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