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Numerical study of carrier velocity for P-type strained silicon MOSFETdan MOSFET-like carbon nanotube field effect transistor model

Ahmadi, Mohammad Taghi and Heong, Yau Wei and Ismail, Razali (2009) Numerical study of carrier velocity for P-type strained silicon MOSFETdan MOSFET-like carbon nanotube field effect transistor model. In: 2009 NSTI Nanotechnology Conference (Nanotech 2009), 2009, Houston, Texas, USA.

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Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:15506
Deposited By: Liza Porijo
Deposited On:30 Sep 2011 09:47
Last Modified:30 Sep 2011 09:47

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