Saad, Ismail and M. A. Lee, Razak and A. R., Munawar and F. M. N., Zul Atfyi and Ismail, Razali (2009) Enhanced performance of nanoscale vertical MOSFET by oblique rotating implantation (ORI) and fillet local oxidation (FILOX + ORI) technology. In: Second Seminar on Engineering and Information Technology 2009, 2009, Kota Kinabalu.
Full text not available from this repository.
Official URL: http://dms.library.utm.my:8080/vital/access/manage...
Abstract
Enhanced symmetrical self-aligned double-gate (DG) vertical MOSFET with low parasitic capacitance is presented. The process utilizes the oblique rotating ion implantation (ORI) method combined with fillet local oxidation (FILOX) technology (FILOX i- ORI). Self-aligned region forms a sharp vertical channel profile with an increased number of electrons in the channel. The analysis was made with scaling the channel length down to 50nm and comparing with standard devices. Tremendous improved of drive-on current, reduced ofT-state leakage current and minimized effects of drain-induced-barrier-lowering (DIBL) have been revealed. The gate-to-drain capacitance has been signific.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | MOSFET, drain-induced-barrier-lowering |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 15151 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 21 Sep 2011 09:47 |
| Last Modified: | 20 Jul 2020 01:24 |
Repository Staff Only: item control page
