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Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs

Heong, Yau Wei and Ahmadi, Mohammad Taghi and Ismail, Razali (2009) Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs. In: Regional Conference on Solid State Science and Technology 2009 (RCSSST 2009) , 2009, Bayview Beach Resort, P. Pinang.

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Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:14823
Deposited By: Liza Porijo
Deposited On:14 Sep 2011 04:39
Last Modified:14 Sep 2011 04:39

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