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The formation of nanocrystalline diamond coating on WC deposited by microwave assisted plasma CVD

Purniawan, A. and Hamzah, E. and Toff, M. R. M. (2007) The formation of nanocrystalline diamond coating on WC deposited by microwave assisted plasma CVD. In: International Conference on Advancement of Materials and Nanotechnology, 2007, Langkawi, Kedah.

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Official URL: http://dx.doi.org/10.1063/1.3377876

Abstract

Diamond is one form of carbon structure. The extreme hardness and high chemical resistant of diamond coatings determined that many works on this area relate to coated materials for tribological applications in biomedicine, as mechanical seals or cutting tools for hard machining operations. In the work, nanocrystalline diamond (NCD) coated tungsten carbide (WC) have been deposited by microwave assisted plasma chemical vapor deposition (MAPCVD) from CH4/H2 mixtures. Morphology of NCD was investigated by using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The quality of NCD is defined as ratio between diamond and non diamond and also full width at half maximum (FWHM) was determined using Raman spectra. The result found that the NCD structure can be deposited on WC surface using CH4/H2 gas mixture with grain size ~20 nm to 100 nm. Increase %CH4 concentration due to increase the nucleation of NCD whereas decrease the quality of diamond. Based on Raman spectra, the quality of NCD is in the range ~98.82–99.01% and 99.56–99.75% for NCD and microcrystalline (MCD), respectively. In addition, FWHM of NCD is high than MCD in the range of 8.664–62.24 cm-1 and 4.24–5.05 cm-1 for NCD and MCD respectively that indicate the crystallineity of NCD is smaller than MCD.

Item Type:Conference or Workshop Item (Paper)
Additional Information:International Conference on Advancement of Materials and Nanotechnology, 2007, Shah Alam
Subjects:T Technology > TJ Mechanical engineering and machinery
Divisions:Mechanical Engineering
ID Code:14530
Deposited By: Liza Porijo
Deposited On:25 Aug 2011 04:01
Last Modified:21 Mar 2012 03:54

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