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The effect of different ge concentration on the characteristics of strain silicon MOSFET

Jin, Wong Yah and Ismail, Razali (2007) The effect of different ge concentration on the characteristics of strain silicon MOSFET. In: 23rd Regional Conference of Solid State Science & Technology (RCSST), 2007, Hyatt Regency Hotel, Johor Bahru.

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Abstract

Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:concentration, silicon MOSFET
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:14523
Deposited By: Mrs Liza Porijo
Deposited On:25 Aug 2011 03:43
Last Modified:06 Aug 2017 00:17

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