Jin, Wong Yah and Ismail, Razali (2007) The effect of different ge concentration on the characteristics of strain silicon MOSFET. In: 23rd Regional Conference of Solid State Science & Technology (RCSST), 2007, Hyatt Regency Hotel, Johor Bahru.
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Abstract
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | concentration, silicon MOSFET |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 14523 |
| Deposited By: | Liza Porijo |
| Deposited On: | 25 Aug 2011 03:43 |
| Last Modified: | 06 Aug 2017 00:17 |
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