Chii, Aaron Enn Lee and Hui, Houg Lau and Ing, Hui Hii and Arora, Vijay K. (2007) The drift response to the applied electric field in an InGaAs quantum-well nanostructure. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.
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Abstract
InGaAs, or indium gallium arsenide, is an alloy of gallium arsenide and indium arsenide. In a more general sense, it belongs to the InGaAsP quaternary system that consists of alloys of indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), and gallium phosphide (GaP). As gallium and indium belong to Group III of the Periodic Table, and arsenic and phosphorous belong to Group V, these binary materials and their alloys are all III-V compound semiconductors.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | electric field, ingaas quantum, nanostructure |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 14519 |
| Deposited By: | Liza Porijo |
| Deposited On: | 25 Aug 2011 03:45 |
| Last Modified: | 06 Aug 2017 04:08 |
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