Ismail, Razali (2007) Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.
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| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | oblique rotating ion, NMOSFET |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 14418 |
| Deposited By: | Liza Porijo |
| Deposited On: | 24 Aug 2011 07:05 |
| Last Modified: | 12 Nov 2012 03:37 |
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