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Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET

Saad, Ismail and Ismail, Razali (2007) Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.

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Abstract

NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:oblique rotating ion, NMOSFET
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:14418
Deposited By: Mrs Liza Porijo
Deposited On:24 Aug 2011 07:05
Last Modified:03 Aug 2017 00:54

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