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Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET

Ismail, Razali (2007) Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.

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Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:oblique rotating ion, NMOSFET
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:14418
Deposited By: Liza Porijo
Deposited On:24 Aug 2011 07:05
Last Modified:12 Nov 2012 03:37

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